LM358N vs LMC6032MWA feature comparison

LM358N National Semiconductor Corporation

Buy Now Datasheet

LMC6032MWA National Semiconductor Corporation

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP NATIONAL SEMICONDUCTOR CORP
Part Package Code DIP WAFER
Package Description PLASTIC, DIP-8 DIE, WAFER
Pin Count 8
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Average Bias Current-Max (IIB) 0.05 µA
Bias Current-Max (IIB) @25C 0.25 µA
Common-mode Reject Ratio-Min 65 dB
Common-mode Reject Ratio-Nom 85 dB 83 dB
Frequency Compensation YES YES
Input Offset Voltage-Max 9000 µV 9000 µV
JESD-30 Code R-PDIP-T8 X-XUUC-N
JESD-609 Code e0
Length 9.817 mm
Low-Offset NO NO
Moisture Sensitivity Level 1
Neg Supply Voltage Limit-Max
Neg Supply Voltage-Nom (Vsup)
Number of Functions 2 2
Number of Terminals 8
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIP DIE
Package Equivalence Code DIP8,.3 WAFER
Package Shape RECTANGULAR UNSPECIFIED
Package Style IN-LINE UNCASED CHIP
Packing Method RAIL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Seated Height-Max 5.08 mm
Slew Rate-Nom 0.1 V/us 1.1 V/us
Supply Current-Max 2 mA 1.9 mA
Supply Voltage Limit-Max 32 V 16 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO YES
Technology BIPOLAR CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE NO LEAD
Terminal Pitch 2.54 mm
Terminal Position DUAL UPPER
Time@Peak Reflow Temperature-Max (s) 40
Unity Gain BW-Nom 1000 1400
Voltage Gain-Min 25000 20000
Width 7.62 mm
Base Number Matches 4 1
Low-Bias YES
Micropower YES
Slew Rate-Min 0.4 V/us

Compare LM358N with alternatives

Compare LMC6032MWA with alternatives