LM258AN vs TA75358P feature comparison

LM258AN Samsung Semiconductor

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TA75358P Toshiba America Electronic Components

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC TOSHIBA CORP
Package Description DIP, DIP8,.3 DIP, DIP8,.3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.08 µA 0.25 µA
Frequency Compensation YES YES
Input Offset Voltage-Max 4000 µV 7000 µV
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e0 e0
Low-Offset NO NO
Number of Functions 2 2
Number of Terminals 8 8
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -25 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 2 mA 1.2 mA
Supply Voltage Limit-Max 16 V 36 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade OTHER INDUSTRIAL
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 25000 20000
Base Number Matches 9 1
Part Package Code DIP
Pin Count 8
Samacsys Manufacturer Toshiba
Average Bias Current-Max (IIB) 0.25 µA
Common-mode Reject Ratio-Nom 85 dB
Length 9.6 mm
Neg Supply Voltage Limit-Max
Neg Supply Voltage-Nom (Vsup)
Seated Height-Max 4.25 mm
Slew Rate-Nom 0.8 V/us
Supply Voltage-Nom (Vsup) 5 V
Unity Gain BW-Nom 1500
Width 7.62 mm

Compare LM258AN with alternatives

Compare TA75358P with alternatives