LBAS16TW1T1G
vs
BAS16TW
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
LESHAN RADIO CO LTD
|
DIODES INC
|
| Package Description |
R-PDSO-G6
|
ULTRA SMALL, PLASTIC PACKAGE-6
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Configuration |
SEPARATE, 3 ELEMENTS
|
SEPARATE, 3 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.715 V
|
1.25 V
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G6
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
3
|
3
|
| Number of Terminals |
6
|
6
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
0.15 A
|
0.15 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
0.2 W
|
0.2 W
|
| Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
| Reverse Current-Max |
50 µA
|
50 µA
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Reverse Test Voltage |
75 V
|
75 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
10
|
|
|
|
Compare LBAS16TW1T1G with alternatives
Compare BAS16TW with alternatives