KBP151GC2 vs DF15005M feature comparison

KBP151GC2 Taiwan Semiconductor

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DF15005M Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PSIP-W4
JESD-609 Code e3
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position SINGLE
Base Number Matches 2 1
Peak Reflow Temperature (Cel) 260

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