JAN1N5819-1
vs
1N5819-T3
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Package Description |
HERMETIC SEALED PACKAGE-2
|
O-PALF-W2
|
| Reach Compliance Code |
compliant
|
unknown
|
| Factory Lead Time |
24 Weeks
|
|
| Additional Feature |
HIGH RELIABILITY
|
FREE WHEELING DIODE, LOW POWER LOSS
|
| Application |
GENERAL PURPOSE
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.49 V
|
|
| JEDEC-95 Code |
DO-41
|
DO-41
|
| JESD-30 Code |
O-LALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e0
|
|
| Non-rep Pk Forward Current-Max |
25 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-PRF-19500; MIL-STD-750
|
|
| Rep Pk Reverse Voltage-Max |
45 V
|
40 V
|
| Reverse Current-Max |
50 µA
|
|
| Reverse Test Voltage |
45 V
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| Moisture Sensitivity Level |
|
1
|
|
|
|
Compare JAN1N5819-1 with alternatives
Compare 1N5819-T3 with alternatives