IRF540 vs MTB33N10ET4 feature comparison

IRF540 Intersil Corporation

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MTB33N10ET4 onsemi

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERSIL CORP ON SEMICONDUCTOR
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 230 mJ 545 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 28 A 33 A
Drain-source On Resistance-Max 0.077 Ω 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W 2.5 W
Pulsed Drain Current-Max (IDM) 110 A 99 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 135 ns
Turn-on Time-Max (ton) 133 ns
Base Number Matches 3 1
Package Description CASE 418B-03, D2PAK-3
Pin Count 3
Manufacturer Package Code CASE 418B-03
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 235

Compare IRF540 with alternatives

Compare MTB33N10ET4 with alternatives