HERF1008GAHC0G
vs
MBR20200FAT_T0_00001
feature comparison
| Part Life Cycle Code |
Active
|
End Of Life
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
PANJIT INTERNATIONAL INC
|
| Package Description |
ITO-220AB, 3 PIN
|
ITO-220AB, 3 PIN
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Samacsys Manufacturer |
Taiwan Semiconductor
|
PANJIT
|
| Additional Feature |
LOW POWER LOSS
|
FREE WHEELING DIODE, LOW POWER LOSS
|
| Application |
EFFICIENCY
|
EFFICIENCY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
COMMON ANODE, 2 ELEMENTS
|
COMMON ANODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.7 V
|
0.9 V
|
| JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
|
| Non-rep Pk Forward Current-Max |
125 A
|
200 A
|
| Number of Elements |
2
|
2
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
5 A
|
10 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Reference Standard |
AEC-Q101
|
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
200 V
|
| Reverse Current-Max |
10 µA
|
5 µA
|
| Reverse Recovery Time-Max |
0.08 µs
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
NOT SPECIFIED
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Date Of Intro |
|
2016-09-21
|
| Technology |
|
SCHOTTKY
|
|
|
|
Compare HERF1008GAHC0G with alternatives
Compare MBR20200FAT_T0_00001 with alternatives