HERF1008GAHC0G vs BYQ30E-100 feature comparison

HERF1008GAHC0G Taiwan Semiconductor

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BYQ30E-100 NXP Semiconductors

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD NXP SEMICONDUCTORS
Package Description ITO-220AB, 3 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature LOW POWER LOSS
Application EFFICIENCY ULTRA FAST SOFT RECOVERY
Case Connection ISOLATED CATHODE
Configuration COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.7 V
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Non-rep Pk Forward Current-Max 125 A 110 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 5 A 8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 1000 V 100 V
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.08 µs 0.025 µs
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 1
Qualification Status Not Qualified

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