GBPC35005 vs GBPC3500-T feature comparison

GBPC35005 Galaxy Microelectronics

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GBPC3500-T Formosa Microsemi Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD FORMOSA MICROSEMI CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 35 A 35 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO
Base Number Matches 3 1
Diode Element Material SILICON

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