FDMS86101DC vs EPC2104ENGR feature comparison

FDMS86101DC Fairchild Semiconductor Corporation

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EPC2104ENGR Efficient Power Conversion

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Contact Manufacturer
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP EFFICIENT POWER CONVERSION CORP
Part Package Code QFN
Package Description ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 UNCASED CHIP, R-XXUC-X75
Pin Count 8
Manufacturer Package Code 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 216 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 14.5 A 23 A
Drain-source On Resistance-Max 0.0075 Ω 0.0063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-240AA
JESD-30 Code R-PDSO-F5 R-XXUC-X75
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 2
Number of Terminals 5 75
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE UNCASED CHIP
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 200 A 165 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT UNSPECIFIED
Terminal Position DUAL UNSPECIFIED
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON GALLIUM NITRIDE
Base Number Matches 1 1

Compare FDMS86101DC with alternatives

Compare EPC2104ENGR with alternatives