BSS84-G
vs
BSS84/DG
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
ONSEMI
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
onsemi
|
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Terminal Finish |
MATTE TIN
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
SOT-23
|
| Package Description |
|
PLASTIC PACKAGE-3
|
| Pin Count |
|
3
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
50 V
|
| Drain Current-Max (ID) |
|
0.13 A
|
| Drain-source On Resistance-Max |
|
10 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
|
12 pF
|
| JEDEC-95 Code |
|
TO-236AB
|
| JESD-30 Code |
|
R-PDSO-G3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity/Channel Type |
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
0.25 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare BSS84-G with alternatives
Compare BSS84/DG with alternatives