BSS138-G vs BSS138-13-F feature comparison

BSS138-G Comchip Technology Corporation Ltd

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BSS138-13-F Diodes Incorporated

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD DIODES INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Samacsys Manufacturer Comchip Technology Diodes Incorporated
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V 50 V
Drain Current-Max (ID) 0.22 A 0.2 A
Drain-source On Resistance-Max 6 Ω 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF 8 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W 0.3 W
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Factory Lead Time 8 Weeks
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Terminal Finish MATTE TIN
Transistor Application SWITCHING

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Compare BSS138-13-F with alternatives