BSS123LT1G vs BSS123/L99Z feature comparison

BSS123LT1G onsemi

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BSS123/L99Z National Semiconductor Corporation

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Pbfree Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ONSEMI NATIONAL SEMICONDUCTOR CORP
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description ROHS COMPLIANT, CASE 318-08, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code 318-08
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Factory Lead Time 53 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.17 A 0.17 A
Drain-source On Resistance-Max 6 Ω 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF 6 pF
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.225 W 0.36 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Power Dissipation Ambient-Max 0.36 W
Transistor Application SWITCHING

Compare BSS123LT1G with alternatives

Compare BSS123/L99Z with alternatives