BC856B vs BC856AW/T3 feature comparison

BC856B Infineon Technologies AG

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BC856AW/T3 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code compliant unknown
Samacsys Manufacturer Infineon
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 65 V 65 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 220 125
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 100 MHz
Base Number Matches 14 1
Part Package Code SC-70
ECCN Code EAR99
Collector-Base Capacitance-Max 5 pF
VCEsat-Max 0.65 V

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