BAV99/8,215
vs
BAV99/FD
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NEXPERIA
|
| Package Description |
SOT-23, 3 PIN
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
|
| Samacsys Manufacturer |
NXP
|
|
| Additional Feature |
LOW LEAKAGE CURRENT
|
|
| Application |
GENERAL PURPOSE
|
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
|
| JEDEC-95 Code |
TO-236AB
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| Non-rep Pk Forward Current-Max |
4 A
|
|
| Number of Elements |
2
|
|
| Number of Phases |
1
|
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.215 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Power Dissipation-Max |
0.25 W
|
|
| Reference Standard |
AEC-Q101
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
|
| Reverse Current-Max |
0.5 µA
|
|
| Reverse Recovery Time-Max |
0.006 µs
|
|
| Reverse Test Voltage |
80 V
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
1
|
1
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare BAV99/8,215 with alternatives
-
BAV99/8,215 vs BAV99,235
-
BAV99/8,215 vs BAV99-T
-
BAV99/8,215 vs BAV99
-
BAV99/8,215 vs BAV99/8,235
-
BAV99/8,215 vs BAV99,215
-
BAV99/8,215 vs BAV99/T4
-
BAV99/8,215 vs BAV99/TE1R
-
BAV99/8,215 vs BAV99,185
-
BAV99/8,215 vs BAV99T/R
Compare BAV99/FD with alternatives