BAS16E6327XT vs BAV19W-T1 feature comparison

BAS16E6327XT Infineon Technologies AG

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BAV19W-T1 Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-G3 R-PDSO-G2
Reach Compliance Code compliant unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.37 W 0.41 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 80 V 100 V
Reverse Recovery Time-Max 0.006 µs 0.05 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Moisture Sensitivity Level 1
Output Current-Max 0.2 A

Compare BAS16E6327XT with alternatives

Compare BAV19W-T1 with alternatives