2N7002T vs 2N7002E,215 feature comparison

2N7002T Galaxy Microelectronics

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2N7002E,215 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD NXP SEMICONDUCTORS
Part Package Code SOT-523 SOT-23
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.115 A 0.385 A
Drain-source On Resistance-Max 7.5 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 10 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 14 1
Pbfree Code Yes
Package Description PLASTIC, SOT-23, 3 PIN
Pin Count 3
HTS Code 8541.21.00.75
Samacsys Manufacturer NXP
Additional Feature LOGIC LEVEL COMPATIBLE
JEDEC-95 Code TO-236AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max (Abs) 0.83 W
Qualification Status Not Qualified
Terminal Finish TIN

Compare 2N7002T with alternatives

Compare 2N7002E,215 with alternatives