2N7002 vs SI1031R-T1-GE3 feature comparison

2N7002 NTE Electronics Inc

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SI1031R-T1-GE3 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer NTE ELECTRONICS INC VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer NTE ELECTRONICS Vishay
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 20 V
Drain Current-Max (ID) 0.115 A 0.14 A
Drain-source On Resistance-Max 13.5 Ω 8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL P-CHANNEL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN
Factory Lead Time 6 Weeks
Additional Feature LOW THRESHOLD
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.28 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare 2N7002 with alternatives

Compare SI1031R-T1-GE3 with alternatives