2N7002 vs 2N7002TRL13 feature comparison

2N7002 NTE Electronics Inc

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2N7002TRL13 NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NTE ELECTRONICS INC NXP SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer NTE ELECTRONICS
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.115 A 0.18 A
Drain-source On Resistance-Max 13.5 Ω 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 10 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description SMALL OUTLINE, R-PDSO-G3
Additional Feature LOGIC LEVEL COMPATIBLE
Operating Temperature-Max 150 °C
Qualification Status Not Qualified

Compare 2N7002 with alternatives

Compare 2N7002TRL13 with alternatives