2N7002 vs 2N7002T,215 feature comparison

2N7002 NTE Electronics Inc

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2N7002T,215 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NTE ELECTRONICS INC NXP SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer NTE ELECTRONICS
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.115 A 0.3 A
Drain-source On Resistance-Max 13.5 Ω 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 10 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code TO-236
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT23
Additional Feature LOGIC LEVEL COMPATIBLE
JEDEC-95 Code TO-236AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Qualification Status Not Qualified
Terminal Finish TIN

Compare 2N7002 with alternatives

Compare 2N7002T,215 with alternatives