2N7000-G
vs
2N7000D26Z
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
COMCHIP TECHNOLOGY CO LTD
|
FAIRCHILD SEMICONDUCTOR CORP
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.21.00.95
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
0.2 A
|
|
| Drain-source On Resistance-Max |
5 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| Feedback Cap-Max (Crss) |
5 pF
|
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-T3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation Ambient-Max |
0.625 W
|
|
| Power Dissipation-Max (Abs) |
0.625 W
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
BOTTOM
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
4
|
1
|
| Pbfree Code |
|
Yes
|
|
|
|
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