2N7000 vs 2N7000RLRM feature comparison

2N7000 InterFET Corporation

Buy Now Datasheet

2N7000RLRM Rochester Electronics LLC

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTER F E T CORP ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.2 A 0.2 A
Drain-source On Resistance-Max 5 Ω 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 5 pF
JEDEC-95 Code TO-226AA TO-92
JESD-30 Code O-PBCY-T3 O-PBCY-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.4 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 40 5
Pbfree Code No
Part Package Code TO-92
Package Description CASE 29-11, TO-226, 3 PIN
Pin Count 3
Manufacturer Package Code CASE 29-11
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30

Compare 2N7000 with alternatives

Compare 2N7000RLRM with alternatives