Part Details for FDS9926A by Fairchild Semiconductor Corporation
Overview of FDS9926A by Fairchild Semiconductor Corporation
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS9926A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 979 |
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Bristol Electronics | 100 |
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RFQ | ||
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Bristol Electronics | Min Qty: 9 | 1845 |
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$0.1575 / $0.5625 | Buy Now |
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Bristol Electronics | 1715 |
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RFQ | ||
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 1542 |
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$0.2125 / $0.5100 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 1476 |
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$0.1950 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 1372 |
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$0.2210 / $0.8500 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 320 |
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$0.4250 / $0.8500 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 306 |
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$0.5250 / $1.0500 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 783 |
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$0.8400 / $2.1000 | Buy Now |
Part Details for FDS9926A
FDS9926A CAD Models
FDS9926A Part Data Attributes:
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FDS9926A
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDS9926A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOIC | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, JEDEC MS-012, .150"NARROW BODY | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS9926A
This table gives cross-reference parts and alternative options found for FDS9926A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS9926A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7406TRPBF | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | FDS9926A vs IRF7406TRPBF |
| RF1K49090 | 3.5A, 12V, 0.05ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | Intersil Corporation | FDS9926A vs RF1K49090 |
| IRF7101TRPBF | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | International Rectifier | FDS9926A vs IRF7101TRPBF |
| IRF7306PBF | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | FDS9926A vs IRF7306PBF |
| IRF7205TRPBF | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | FDS9926A vs IRF7205TRPBF |
| IRF7205PBF | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | FDS9926A vs IRF7205PBF |
| IRF7416QPBF | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | FDS9926A vs IRF7416QPBF |
| 934055451118 | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | NXP Semiconductors | FDS9926A vs 934055451118 |
| IRF7416PBF | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | FDS9926A vs IRF7416PBF |
| MMDF3N02HD | 3.8A, 20V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 | Motorola Mobility LLC | FDS9926A vs MMDF3N02HD |